30-04-2021

Rf Mosfet

HEXFET vs MOSFET | difference between HEXFET and MOSFET

This page compares HEXFET vs MOSFET and mentions difference between HEXFET and MOSFET.

MOSFET

The full form of MOSFET is Metal Oxide Semiconductor Field Effect Transistor.Figure-1 depicts 600 Volt SJ-MOSFET structure and circuit symbol.
Refer Depletion MOSFET vs Enhancement MOSFET➤ and MOSFET Fabrication Technology➤.

HEXFET

Rf Mosfet Switch

Rf Mosfet

The MOSFET (metal-oxide-semiconductor field-effect transistor) is a primary component in power conversion and switching circuits for such applications as motor drives and switch-mode power supplies (SMPSs). MOSFETs boast a high input gate resistance while the current flowing through the channel between the source and drain is controlled by the gate voltage.
RF MOSFETs The RF MOSFETs are a metal-oxide-semiconductor field effect transistor that is designed to operate at high frequencies, typically between 100MHz and well into the GHz range.
IXYS-RF offers N-Channel enhancement mode RF Power MOSFETs that are optimized for RF and high speed switching.

The ARF family of RF Power MOSFETs is optimized for applications requiring frequencies as high as 150MHz and operating voltages as high as 400V. Historically, RF Power MOSFETs were limited to applications of 50V or less. This limitation has been removed by combining Microsemi's high voltage MOSFET technology with RF specific die geometries.

HEXFET is trademark of power MOSFET developed by International Rectifier.The HEXFET structure is shown in the figure-2. As shown silicon oxide layer between gate and source regionscan be punctured by exceeding its dielectric strength. The symbol is same as power MOSFET as shownin the figure-1. It is a voltage controlled power MOSFET device.

When voltage is being applied between Gate and Source terminals, E-field is setupwithin HEXFET device. This electric field inverts the channel from P to N such thatcurrent can flow from Drain to Source in un-interrupted sequence of N-type silicon.

Achievement unlocked 2watermelon gaming. FETs can be of two types viz. enhancement mode and depletion mode.Enhancement mode devices require gate voltage of same sign as drain voltage in order topass the current.Depletion mode devices are usually ON and are turned OFF by Gate voltage of samepolarity as drain voltage.

Following points differentiate HEXFET from MOSFET devices.
➨All HEXFET® devices are enhancement mode devices.
➨As mentioned HEXFET® is trademark of International Rectifier.
➨Gate to source voltage of most of the HEXFET devices arebetween 10 and 30 V.
➨Example: IRF540 is HEXFET device and IRL540 is MOSFET device.

MOSFET and BJT related links

MOSFET vs IGBT➤
PNP Transistor Vs NPN Transistor➤
BJT vs FET➤
JUGFET vs MOSFET➤
Depletion MOSFET vs Enhancement MOSFET➤
MOSFET Fabrication Technology➤
MOSFET vs BJT-Difference between MOSFET and BJT➤
Application Note-MOSFET as switch and amplifier➤
Difference between NMOS vs PMOS➤

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